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Intel and Micron deliver new 20-nanometer process for 8GB MLC NAND flash

Intel and Micron deliver new 20-nanometer process for 8GB MLC NAND flash

Technology News |
By eeNews Europe



A reduction in the flash storage layout provides greater system level efficiency as it enables tablet and smartphone manufacturers to use the extra space for end-product improvements such as a bigger battery, larger screen or adding another chip to handle new features.

Manufactured by IM Flash Technologies (IMFT), Intel and Micron’s NAND flash joint venture, the 20nm 8GB device further extends the companies’ lithography leadership. The 20nm process maintains similar performance and endurance as the previous generation 25nm NAND technology, claim the two manufacturers.

The 20nm 8GB device is sampling now and expected to enter mass production in the second half of 2011. At that time, Intel and Micron also expect to unveil samples of a 16GB device, creating up to 128GBs of capacity in a single solid-state storage solution that is smaller than a U.S. postage stamp.

Visit Micron Technology at www.micron.com

Visit Intel at www.intel.com

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