Intel has reported high yield and uniformity for silicon electron spin qubit devices tested across a 300mm-diameter wafer.
The company claims the achievement is a major milestone towards fabricating quantum chips on Intel’s transistor manufacturing processes and scaling quantum computing.
The research was conducted using Intel’s second-generation silicon spin test chip. The test used a cryoprober that takes whole wafer down to 1.7 Kelvin or -271.45 degrees Celsius before probe contact is made. Using the cryoprober the research team isolated 12 quantum dots and four sensors. This result represents the industry’s largest silicon electron spin device with a single electron in each location across an entire 300 millimeter silicon wafer. Fabricated using extreme ultraviolet (EUV) lithography, the chips show remarkable uniformity, and achieved a 95 percent yield.
This increased yield and uniformity in devices characterized at low temperatures compared with previous Intel test chips represents a crucial step toward scaling to the thousands or potentially millions of qubits required for a commercial quantum computer.
The research was conducted by the Intel Labs and Components Research organizations at Intel’s transistor research and development facility, Gordon Moore Park at Ronler Acres in Hillsboro, Oregon.
James Clarke is director of quantum hardware at Intel: “The high yield and uniformity achieved show that fabricating quantum chips on Intel’s established transistor process nodes is the sound strategy and is a strong indicator for success as the technologies mature for commercialization.”
Details of the research were presented by Samuel Neyens at the 2022 Silicon Quantum Electronics Workshop in Orford, Québec, Canada on Oct. 5, 2022.
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