With the development of bidirectional inverters, Delta enables electric vehicles to be used as a backup power supply in the home. The inverters consist of a hybrid three-in-one system that integrates solar energy, energy storage and electric vehicle (EV) charging.
The bidirectional inverter can be used to charge electric vehicles and house batteries. At the same time, it serves as a backup power supply during power outages and as an efficient control core for green energy. Infineon’s products include the 1200 V M1H CoolSiC EasyPACK-1B modules and the 1200 V CoolSiC D²PAK 7-pin surface mount device. Another milestone is the integration of three applications. The three-in-one system has been accommodated in a compact housing of only 425 x 865 x 160 mm³. With an output power of about 10 kW, the system allows a maximum continuous current of 34 A and achieves peak efficiencies of more than 97.5 percent.
One of the essential elements for realising the three-in-one system is Infineon’s 1200 V M1H CoolSiC EasyPACK 1B module with integrated NTC temperature sensor and PressFIT contact technology. The module offers high flexibility and current density. The package technology in combination with CoolSiC MOSFETs results in a low inductance design with minimal switching and conduction losses. In addition, operation with a high switching frequency is made possible on the customer side, which allows for smaller designs. The EasyPACK module helps optimise development time and reduces overall costs for the customer.
Several other Infineon components are used in the system, including solutions with CoolMOS C7 and Trenchstop 5 IGBT technology. In addition, the 1200 V CoolSiC MOSFET (IMBG120R350M1H) in an SMD package, the 7-pin D²PAK, is also part of this system. In addition to the Kelvin source concept, the component also uses .XT interconnect technology for high-quality thermal properties. The MOSFETs ensure very low switching losses and thus improve the efficiency of the system.
The components have a short-circuit resistance of 3 µs. In addition, the MOSFETs offer fully controllable switching edges (dV/dt) and a benchmark gate threshold voltage (VGS(th)) of 4.5 V. They are also robust against parasitic turn-on and can be operated with a turn-off voltage of 0 V. In addition, the MOSFETs contain a robust body diode that enables hard commutation. The creepage and clearance distances of the package are 6.1 mm. In addition, the SMD package enables direct integration into PCBs with natural convection cooling without additional heat sinks.