IP builds NVM memory at mid-density

IP builds NVM memory at mid-density

New Products |
By eeNews Europe

Reprogrammable DesignWare Medium Density NVM IP delivers flash-like functionality without additional masks or processing steps, reducing die cost by up to 25%. It can provide up to 64 kBytes of on-chip memory with more than 5x the density of lower bit count NVM solutions. The IP enables microcontroller integration with on-chip reprogrammable NVM in 180nm 5V CMOS and BCD processes, where embedded flash capabilities are unavailable, and can be equipped with integrated Error Checking and Correction (ECC) functionality for additional system reliability.

Synopsys positions the memory as an alternative to EEPROM or flash memory when integrating microcontrollers in analogue IC designs for smart sensors, power management and touchscreen controller applications.

The DesignWare Medium Density NVM IP products bring flash functionality to 5V CMOS and BCD process technologies, where embedded reprogrammable NVM is needed. Error checking and correction functionality provides additional system reliability and reduces implementation efforts. The NVM IP offers 40 nsec access time, providing fast read times and real time computing. Validated through rigorous characterisation, qualification and reliability testing in Synopsys labs, the NVM IP supports temperature ranges from -40°C to 125°C with 10 years of data retention.

“With the increasing amount of memory needed to integrate microcontrollers into analogue ICs, designers require cost effective memory solutions that do not sacrifice functionality,” said John Koeter, vice president of marketing for IP and prototyping at Synopsys.

The DesignWare Medium Density NVM IP is available now to early adopters in TSMC 180 nanometer (nm) 5V CMOS and BCD process technologies.


If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles