IP for low-power ROM and RAM in eFlash process at 90 nm

IP for low-power ROM and RAM in eFlash process at 90 nm

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By eeNews Europe

PHOENIX and ERIS are designed to reach the highest density and to offer low power consumption features. The Phoenix products is a metal-programmable ROM generator, optimised for low power, that defines devices with operating voltage: 1.2V±10%, in the range from 16k up to 1024k. Thanks to a proprietary bit cell, the Phoenix ROM allows a gain up to 10% in density versus alternative solutions at 90 nm and gives a drastic reduction of the power consumption thanks to its dual voltage capability.

The DpRAM allows ultra-low leakage thanks to its HVT bitcell; the Eris generator builds dual port RAM that is very high density, and optimised for low power.

The range of memory options for the eFlash process is completed by a unique cache controller, which gives a three-fold performance increase, in speed and power, compared to a stand alone eFlash memory.

Dolphin Integration;

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