IR emitting diodes provide high radiant intensity to 16-mW/sr at 70-mA

IR emitting diodes provide high radiant intensity to 16-mW/sr at 70-mA

New Products |
By eeNews Europe

Based on Vishay’s GaAIAs surface emitter chip technology, the Vishay Semiconductors 850 nm VSMY12850 and 940 nm VSMY12940 combine high radiant intensity and optical power with fast switching times.

The IR emitters released are offered in clear untinted PCB-based packages with inner lenses for surface mounting. Offering lower profiles than devices with dome lenses or PLCC-2 packages, the VSMY12850 and VSMY12940 provide powerful IR illumination in space- constrained end products. When used with Vishay’s VCNL sensor family, the emitters are optimized for proximity and gesture applications, wake-up functions, optical switches, and photointerruptors and IR emitters for 3D gaming units and IR touch panels.

The VSMY12850 and VSMY12940 offer high radiant intensity to 16 mW/sr at a low 70 mA driving current, fast switching times of 10 ns, and forward voltage of 1.6 V. Suitable for high pulse current operation to 1 A at 100 µs, the devices feature a ± 40° angle of half intensity and operate over a temperature range of -40°C to +85°C.

The IR emitters provide a moisture sensitivity level (MSL) of 3 in accordance with J-STD-020 for a shelf life of 168 hours. The devices are RoHS-compliant, halogen-free, and Vishay Green.

Samples and production quantities of the VSMY12850 and VSMY12940 are available now, with lead times of eight to 10 weeks for large orders.

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