IR unveils dual PQFN2x2 and dual PQFN3.3×3.3 power MOSFETs for low power applications

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By eeNews Europe

Featuring a pair of power MOSFETs in each package, the new PQFN2x2 and PQFN3.3×3.3 dual devices offer the flexibility of either common drain or half-bridge topologies. Utilizing IR’s latest low-voltage silicon technologies (N and P), the devices deliver ultra-low losses. The IRLHS6276, for example, features two MOSFETS each with a typical on-state resistance (RDS(on)) of 33 milliohms in only a 4 mm2 area.

The Dual PQFN family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1 mm, the devices are compatible with existing Surface Mount Techniques, feature industry-standard footprint and are RoHS compliant.

Pricing for the IRLHS6276 begins at $0.33 each in 1,000 unit quantities. Production orders are available immediately. Prices are subject to change.
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