IREDs boost output to tackle camera-based applications
The increase in output of the company’s SFH 4715AS and SFH 4716AS devices has been achieved by combining the latest chip design with an optimized package and the Nanostack technology, in which each chip has two emission centers. Depending on the type of external optics and the particular application, the infrared light emitting diodes (IREDs) can provide illumination over a distance of more than 100 meters, which make them even better light sources for many camera-based applications.
Thanks to the high optical output of 1.37 W at 1 A the new IR Oslon Black versions claim to be the most powerful IREDs yet from Osram Opto Semiconductors. The reasons for the increase in output of over 70 percent compared with the standard version include the use of the latest generation of chips, an optimized package design and, most importantly, Nanostack technology which means that each chip has two emission centers.
“After only a brief interval we are now presenting the same component with further improved output. The new Oslon Black Stack generates more light and can therefore provide even better illumination over large distances than the previous versions,” explained Dr. Jörg Heerlein, Marketing Infrared at Osram Opto Semiconductors.
The power IREDs are the preferred light sources for surveillance cameras. Depending on the type of camera and the number of integrated IREDs, distances of more than 100 meters can be illuminated with infrared light. In addition to their main application in surveillance cameras, the IREDs are also suitable for many other industrial camera based applications such as 3D process control cameras to determine the distance from an object by measuring the propagation time.
The package dimensions of the Oslon Black Stack remain unchanged at 3.85 mm x 3.85 mm x 2.29 mm or 1.51 mm. There is also still a choice between beam angles of 90 and 150 degrees for the new components, which means that replacement is straightforward.
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