The 25V IRFH4251D and IRFH4253D feature IR’s latest generation silicon in a package that delivers a high level of power density in a 5 x 6 mm PQFN. The new power block devices feature an integrated monolithic FETKY, and innovative package employing a leading-edge flipped-die technology that enables efficient dissipation of the heat from the source of the synchronous MOSFET directly to the ground layers of the PCB. As a result of improved thermal performance and increased power density, one of the new 5×6 dual devices may replace two 5×6 standard single devices.
The new package also uses IR’s proprietary single copper clip already employed in PowIRStage and SupIRBuck products, as well as an optimised layout that significantly reduces stray inductance to reduce peak ringing. This allows the designer the option to use 25V MOSFETs in place of less efficient 30V devices.
“With its best-in-class silicon, and innovative features and packaging, the IRFH4251D and IRFH4253D power block devices offer industry leading power density for high performance DC-DC switching applications,” said Stephane Ernoux, Director of Marketing, IR’s Power Management Devices Business Unit. “The devices employ a more efficient layout that will define the new industry standard for DC-DC dual MOSFETs,” he added.
Optimised for 5V gate drive applications, the IRFH4251D and IRFH4253D work with any controller or driver to offer design flexibility while delivering higher current, efficiency and frequency capability in a small footprint compared to alternative approaches using two discrete 30V power MOSFETs.
Pricing for the IRFH4253D and IRFH4251D begins at $0.89 and $1.29 (10,000).
International Rectifier; www.irf.com