Is silicon quantum dot-based white-blue LED the future for lighting?
The current and optical power densities of the LED are, respectively, 280 and 350 times greater than those reported previously for such a device at the same voltage (6 V). In addition, the active area of the LED is 4 mm2, which is 40 times larger than that of a typical commercial LED; the thickness of the LED is 0.5 mm.
The hybrid LED, is tipped to be a next-generation illumination device for producing flexible lighting and display, was fabricated by Prof. Ken-ichi Saitow of the Natural Science Center for Basic Research and Development, Hiroshima University with graduate student Yunzi Xin and their collaborators. The research was described in Applied Physics Letters.
The Si QD hybrid LED was developed using a simple method with almost all processes being solution-based and conducted at ambient temperature and pressure. Conductive polymer solutions and a colloidal Si QD solution were deposited on the glass substrate.
"QD LED has attracted significant attention as a next-generation LED. Although several breakthroughs will be required for achieving implementation, a QD-based hybrid LED allows us to give so fruitful feature that we cannot imagine," Prof. Saitow.
Related articles and links:
www.hiroshima-u.ac.jp
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