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Isolated SiC gate drivers offer 2500 V isolation voltage

Isolated SiC gate drivers offer 2500 V isolation voltage

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By eeNews Europe



In order to develop on-chip transformer processes, Rohm utilized its proprietary microfabrication expertise. The unique design reduces the size to a compact SSOP-B20W package while eliminating the need for external parts, cutting the mounting area by approximately 50% compared to conventional products. Moreover, the original core-less transformer technology integrates an isolation function ensuring an isolation voltage of 2,500 Vrms.

In addition, multiple protection functions such as thermal shut-down and short circuit protection supporting desat function , fault and load control are included for high reliability, decreasing design effort while further contributing to miniaturization. A soft turn-off function deactivates the inverter in case of desaturation.

Specifications of BM6103FV-C include:

  • Input voltage (Vcc1): min. 4.5V – max. 5.5V
  • Output voltage (Vcc2): min. 12V – max. 24V
  • Output VEE Voltage (VEE2): min. -12V – max. 0V
  • Operating temperature range (Ta): min. -40° – +125°
  • Rated output current (peak): 5.0A
  • Isolation voltage: 2,500 Vrms
  • Input/output delay time: 400ns
  • Package: SSOP-B20W (6.5mm x 8.1mm, H=2.01mm max.)

Samples are already available, mass production is scheduled for September 2012.

For further information please contact www.rohm.com/eu

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