JEDEC standard PQFN d-mode GaN packages for drop-in replacements
Transphorm is sampling six surface mount JEDEC packages for its depletion mode gallium nitride (GaN) power devices that provide a drop in replacement in designs.
The industry standard PQFN 5x6mm and 8x8mm packages for Transphorm’s patented SuperGaN d-mode two-switch normally-off platform in the package configurations typically used by enhanced e-mode GaN devices. As a result, these six devices can easily serve as a first design source or as pin-to-pin drop-in replacements and/or secondary sources for e-mode GaN designs, says Transphorm.
For power systems that require additional thermal performance from the SuperGaN platform, Transphorm also offers SMDs in proprietary optimized. All Transphorm devices offer easy designability and drivability regardless of packaging given the d-mode configuration’s use of a low-voltage Silicon MOSFET paired with the GaN HEMT transistor. This configuration also allows for the use of standard, off-the-shelf controllers and drivers.
“Transphorm continues to produce a strong GaN device portfolio, one that covers the widest power spectrumtoday. We’ve solidified our low power strategy with the release of these Industry Standard packages, which follow the recently announced SiP developed with Weltrend Semiconductors,” said Philip Zuk, Senior Vice President of Business Development and Marketing, Transphorm.
“Customers now have a choice of how they can tap into the advantages of SuperGaN whether it be through Performance packages, pin-to-pin e-mode compatible Industry Standard packages, or a System-in-Package.”
Replacing e-mode devices with SuperGaN d-mode FETs can provide higher performance and lower operating temperature through lower conduction losses, resulting in longer lifetime reliability, but had previously had non-standard packaging and pinouts.
One example of such validation can be found in a recent head-to-head comparison wherein 50 mΩ e-mode was replaced by 72 mΩ SuperGaN technology in a 280 W gaming laptop charger. In the charger analysis, the SuperGaN FETs operated at the controller’s output voltage range (whereas e-mode had to level shift) with cooler temperatures. The SuperGaN temperature coefficient of resistance (TCR) is approximately 25 percent lower than that of e-mode, contributing to the lower conduction losses. Additionally, the peripheral component count was reduced by 20%, suggesting a lower BOM cost.
The 72 mΩ FET is aimed at datacom, broad industrial, PV inverter, servo motor, computing systems, and general consumer applications.
The 150, 240, and 480 mΩ FETs are intended for use in power adapter, low power SMPS, lighting, and low power consumer applications.
All the devices are currently sampling
www.transphormusa.com/en/products/#sampling.
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