Kioxia samples UFS embedded flash for mobile applications
Cette publication existe aussi en Français
Kioxia Corporation has announced that it has begun sampling new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices.
The UFS Ver. 4.1 embedded memory devices integrate Kioxia’s innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. Built on 8th-generation BiCS FLASH technology to boost speed and power efficiency, the embedded flash devices are ideal for next-generation mobile applications. This generation introduces CBA (CMOS directly Bonded to Array) technology—an architectural innovation that marks a step-change in flash memory design. By directly bonding the CMOS circuitry to the memory array, CBA technology enables significant gains in power efficiency, performance and density.
With a blend of speed and low power use, the UFS Ver. 4.1 memory devices enable faster downloads and smoother app performance to enhance user experiences.
The flash memory is available in capacities of 256 GB, 512 GB, and 1 TB.
These latest devices offer improved performance over the previous generation in a small BGA package. Random writes for 512 GB and 1 TB memory devices are approximately 30% faster, while random reads for 512 GB are around 45% faster and for 1 TB are approximately 35% faster.
Power efficiency improvement over the previous generation is approximately 15% better when reading 512 GB and 1 TB devices, while write power efficiency sees an improvement of around 20% for 512 GB. and 1 TB memory.
Furthermore, Host Initiated Defragmentation enables delayed garbage collection for uninterrupted fast performance during critical times, while WriteBooster buffer resizing provides better flexibility for optimal performance.
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
