
Krysiak joins board of US SiC materials maker
A senior executive from STMicroelectronics has joined the board of a US supplier of silicon carbide (SiC) and sapphire cyrstals.
Bob Krysiak, who moved to ST from Inmos and has run the China and Americas operations has joined the board of GT Advanced Technologies (GTAT). It’s subsidiary, GTAT Corp, produces silicon carbide and sapphire materials.
Krysiak has more than 30 years of experience at ST and was a key player in driving the SiC-based semiconductor business into the market. The company recently brought European SiC wafer maker Norstel in-house and has deals with Rohm and Cree. It is this experience that GTAT hopes will strengthen its strategy as a major player in the SiC market.
- ST ADDS ROHM SUBSIDIARY AS WAFER SUPPLIER; ST TAKES OVER WAFER MAKER NORSTEL; ST TEAMS WITH CREE FOR SILICON CARBIDE WAFERS
“GTAT has made a remarkable pivot over the last few years becoming a world-class supplier of crystal materials,” said Gene Davis, chairman of the board at GTAT. “The appointment of Bob to the Board of Directors strengthens the relevant experience and talent on the Board in order to continue to effectively govern and support the Company as it takes a leading position in the silicon carbide market. The Company has a leadership team second to none and leveraging Bob’s expertise in this area will further accelerate its growth going forward.”
“We are very excited to have Bob join our Board of Directors,” said GTAT’s President and CEO Greg Knight. “His outstanding accomplishments in the SiC semiconductor space will prove invaluable to us as we accelerate our leadership in high-quality, attractively-priced SiC crystal for substrate manufacturers.”
“I am extremely pleased to be joining the GTAT Board,” said Krysiak. “During my time at ST, we recognized very early that silicon carbide devices would be a game-changer for high-growth markets such as EV’s. GTAT’s top-tier quality combined with a business model focused on high-volume crystal production and cost leadership will enable a broader supply of silicon carbide wafers and accelerate the use of silicon carbide in power electronics.”
Krysiak graduated from Cardiff University, UK, with a degree in Electronics and holds an MBA from the University of Bath, UK. He replaces Matthew Aronsky who has recently resigned after serving on GTAT’s board since 2016.
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