Kyoto preps 400Gbps photodiode with integral lens
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By
Peter Clarke
The KP-H KPDEH12L-CC1C is made in InGaAs abd supports high-speed data transmission systems inside and between data centers that use the PAM-4 scheme. The part is due to go into mass production in November 2020.
The photodiode has an integrated transimpedance amplifier and the part has passed the Telcordia GR-468-Core, a standard reliability test for communication equipment.
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