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Kyoto preps 400Gbps photodiode with integral lens

Kyoto preps 400Gbps photodiode with integral lens

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By Peter Clarke



The KP-H KPDEH12L-CC1C is made in InGaAs abd supports high-speed data transmission systems inside and between data centers that use the PAM-4 scheme. The part is due to go into mass production in November 2020.

The photodiode has an integrated transimpedance amplifier and the part has passed the Telcordia GR-468-Core, a standard reliability test for communication equipment.

Related links and articles:

www.kyosemi.co.jp

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