L-Band avionics transistor delivers up to 1200-W
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By
Wisse Hettinga
Based on a GaN-on-SiC HEMT technology, the IGN1011L1200 delivers a minimum of 1200 W of peak pulse power with a 50-V supply voltage and 6.4% duty factor. With typical >17 dB gain and 75% efficiency, IGN1011L1200 is a GEN-2 device. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
This L-band avionic transistor is specified for use under class AB operation where negative gate voltage and bias sequencing is required. It is 100% high power RF tested in a fixed tuned RF test fixture.
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