L-band RF power amplifier for IFF/SSR systems
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By
eeNews Europe
IGNP1011L2400 is a high power GaN-on-SiC RF power amplifier module/pallet that has been designed specifically for IFF/SSR systems operating under either Mode S ELM (48x {32μs on, 18μs off}, 6.4% Long Term Duty Cycle) or standard Mode S (128μs, 2% Duty Cycle) pulse conditions. It supplies a minimum of 2200W of peak output power, with typically >16 dB of gain and 57% efficiency and operates from a 50V supply voltage. This RF power amplifier module/pallet is matched to 50-ohms at both input and output and is suitable for both 1030 and 1090 MHz.
Integra Technologies – www.integratech.com
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