Large silicon solar cell achieves new efficiency record
The 243.18 cm2 cell was developed by Trina’s State Key Laboratory (SKL) of PV Science and Technology (PVST) on a large-sized industrial phosphorous-doped Cz Silicon substrate with a low-cost industrial IBC process with conventional tube doping technologies and fully screen-printed metallization.
The 6in cell reached a total-area efficiency of 25.04% as independently measured by JET in Japan with an open-circuit voltage of 715.6 mV, a short-circuit current density Jsc of 42.27 mA/cm2 and a fill factor FF of 82.81%. It has been demonstrated to be the first single-junction c-Si solar cell developed in China to attain an efficiency above 25%, and also has been demonstrated to be the highest efficiency c-Si single junction solar cell based on a 6n large-area c-Si substrate.
The laboratory so far has broken 18 world records in PV cell efficiency and module power output.
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