LDMOS RF power transistor targets rugged engineering environments

LDMOS RF power transistor targets rugged engineering environments

New Products |
By eeNews Europe

Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression. The BLF188XR is capable of providing an outstanding 1600 W of peak output power and can operate as high as 60 V, and still pass extreme ruggedness testing. Other key features include stronger integrated ESD protection allowing the BLF188XR to be used in a Class C mode of operation, and several enhancements that make the XR device easy to design in and tune in multiple applications.

The BLF188XR claims excellent linearity, making the device a candidate for high-power linear applications. The BLF188XR is ideal for large-scale industrial, scientific and medical (ISM) applications in frequency ranges under 300 MHz, while the BLF578XR series is recommended for frequency ranges up to 500 MHz.


Engineering samples of the BLF188XR are now available to qualified customers.

More information about the NXP BLF188XR LDMOS RF power transistor at   

If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles