LDMOS RF power transistors deliver a record efficiency of 52 percent

LDMOS RF power transistors deliver a record efficiency of 52 percent

New Products |
By Jean-Pierre Joosting

Specifically designed to meet the demands of the cellular industry for more power efficient base station designs, the Gen10 family reduces power consumption, shrinks the size and weight of the power amplifier, and lowers the operating temperature of infrastructure equipment.

Thanks to an innovative implementation of internal decoupling, the transistors enable wide band operation, where a single PA can cover a complete LTE band simultaneously.

Fred van Rijs, Senior Director LDMOS program, Ampleon comments, “This is a breakthrough showing that major performance increases are still possible with LDMOS. These improvements of around 2 dB of gain and 5 points of efficiency, significantly contribute to a greener planet by lowering the power consumption of wireless base stations.”

The Gen10 series of RF power transistors include:

  • BLC10G18XS-320AVT, 1805-1880 MHz, > 47.5 dBm average, >51.5 % efficiency;
  • BLC10G20LS-240PWT, 1805-1880 MHz, 47.5 dBm average, >52 % efficiency (in a 3-way PA);
  • BLC10G22LS-100AWT, 2110 – 2200 MHz, 42 dBm average, >49.3 % efficiency;
  • BLC10G22XS-400AVT, 2110 – 2200 MHz, >49.4 dBm, >48.6 % efficiency;
  • BLC10G27XS-320AVT, 2500 – 2700 MHz, >47.1 dBm, >47.5 % efficiency.

Gen10 devices are assembled using Ampleon’s innovative and most cost effective ACP3 packaging.

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