LDMOS RF power transistors offer best-in-class ruggedness and performance without added cost
Based on NXP’s LDMOS technology, the XR family extends LDMOS into the few remaining domains that are serviced by VDMOS and bipolar transistors today.
Sudden and severe load disturbances are commonplace in certain RF power applications. The RF power transistor is expected to survive them all, without failure or degradation, through years of active life. These load disturbances are replicated in the lab by inducing mismatches at the load side, with the severity of the mismatch recorded as a voltage standing wave ratio (VSWR). While most base-station and broadcast applications require rugged RF power transistors to survive a VSWR of 10:1 through all phases, the BLF578XR easily survives repeated VSWR tests of 125:1 – the highest level measured by the test unit. This is critical for certain ISM applications that require the RF power transistor to survive a VSWR test that can exceed 100:1.
The new BLF578XR claims to be an extremely rugged version of NXP’s BLF578, an RF power transistor workhorse for a multitude of broadcast and ISM applications. In most applications, the BLF578XR will be a simple plug-in replacement for the BLF578.
NXP will be showcasing its first XR RF power transistor, the BLF578XR, at the IEEE MTT-S International Microwave Symposium 2011 (IMS2011) in Baltimore, Maryland, USA (booth #420).
NXP BLF578XR samples are available now, with volume shipping to begin in Q3 2011.
More information about the BLF578XR LDMOS RF power transistors is available at: www.nxp.com/pip/BLF578XR.html.
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