LDMOS RF power transistors target next-gen amplifier systems
Most of today’s amplifier systems operate with instantaneous (video) bandwidth limitations of 20 to 40 MHz and require a separate power amplifier for each channel. However, increasing wireless data traffic is driving a trend to extend amplifier systems to cover entire wireless frequency bands. Freescale’s RF power LDMOS transistors deliver a compelling combination of high linearity, high efficiency, wide instantaneous bandwidth and high power that extend the instantaneous signal bandwidth to an industry-leading 160 MHz, making them ideal for these next-generation amplifier systems.
The MRF8P20165WH/S for the 1930 to 1995 MHz PCS band and the MRF8P20140WH/S for the 1880 to 2025 MHz TD-SCDMA bands F & A, can support the corresponding wireless spectrum with one amplifier. This significantly reduces the number of power amplifiers needed for a multi-band base station and enables network operators to consolidate devices and equipment, resulting in lower operating expenditures.
In addition, the wide instantaneous bandwidth of the LDMOS devices increases network flexibility for network operators by allowing network equipment sharing between operators and by simplifying upgrades. Operators can add/exchange spectrum holdings within a frequency band without upgrading equipment, and because wideband/multi-band PAs are generally agnostic to modulation formats, operators can upgrade to 4G LTE and other wireless standards with a simple software change and no additional hardware. This means network operators save on both capital and operating costs. Operators also can reconfigure channels on the fly and apply channel consolidation to support increased data rates.
The MRF8P20165WH/S and MRF8P20140WH/S meet linearity requirements for PCS and TD-SCDMA standards while delivering efficiency of at least 43.7 percent when amplifying multiple wireless carriers separated by up to 65 MHz (PCS) and 10 MHz (TD-SCDMA). Both devices are dual-path designs, and can implement the final stage of a Doherty amplifier with one path as the main amplifier and the other as the peaking amplifier.
Key specifications for the MRF8P20165WH/S (1930 to 1995 MHz) include 37 W average power with input signal peak-to-average ratio (PAR) of 9.9 dB, 16.3 dB typical power gain, and 47.7 percent drain efficiency.
Key specifications for the MRF8P20140WH/S (1880 to 2025 MHz) include 24 W average power with input signal PAR of 9.9 dB, 16 dB typical power gain, and 43.7 percent drain efficiency.
Both devices are designed for use in Doherty amplifier configurations and digital pre-distortion. They are extremely rugged and can handle a 10:1 VSWR impedance mismatch when operating at 32-V and driven with twice their recommended input power. The transistors are internally matched with low capacitance to simplify circuit design and have integrated electrostatic discharge (ESD) protection that makes them more resistant to stray voltage encountered on assembly lines. In addition, their broad gate-source voltage range of -6 to +10-V increases their performance when operated in Class C mode. The transistors are housed in the company’s NI-780-4 and NI-780S-4 air cavity packages.
For further information: www.freescale.com.
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