LDMOS RF power transistors target TD-LTE basestations
As China prepares to roll out the world’s largest 4G network, Gen8+ enhances NXP’s TD-LTE portfolio – the most comprehensive LDMOS portfolio for TD-LTE available today – and delivers improvements in performance, flexibility and cost-efficiency. The first Gen8+ device to be introduced, the BLC8G27LS-160AV, claims to be the smallest and most cost-effective solution for 15 W and 20 W power amplifiers for active antenna outdoor base stations (2.6 GHz). The device can handle up to 5 TD-LTE carriers simultaneously and delivers high efficiency over the full band (2.5 to 2.7 GHz).
One of the groundbreaking features of the Gen8+ portfolio is the use of air cavity plastic (ACP) packages. ACP is both less costly and more flexible than ceramic packages, which means that new product variants can be introduced more quickly. The ACP packages also allow the use of improved passives, which enhance performance by reducing power consumption while increasing gain and efficiency. Gen8+ complements a wide range of other package options, including QFN, OMP and ceramic.
The Gen8+ portfolio is initially designed for base station applications at frequencies between 2300-2700 MHz. As an extension of existing NXP LDMOS product families, Gen8+ expands the wide range of power levels in each band, ranging from 5 W to 240 W. The power capabilities and reduced footprint of Gen8+ means that further cost savings are also possible.
www.nxp.com/pip/BLC8G27LS-160AV
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