LDMOS transistors in 50V process target sub-1GHz-basestations
These devices, enabling more than 57% efficiency and 18 dB power gain, and their 50V operation, make for a significantly more compact and cost-effective application. Operating over a wide frequency range (450 MHz to 960 MHz), they provide a flexible approach to handling multiple channels with a single amplifier. An example built by Ampleon features a Gen9HV transistor in a low cost compact power amplifier design covering 720 MHz to 960 MHz that offers excellent efficiency and linearity in addition to multi-band capability.
Single band operation further improves efficiency and gain with a compact and cost-effective single-transistor Doherty amplifier (with WCDMA and LTE signal at 634 MHz). Typical applications include use in 4G LTE and NB-IoT base stations and remote radio heads.
Capable of delivering up to 400 Watts from a compact 20 mm long package, the series is assembled in an air cavity package with an ultra-low Rth flange, named ACP3. This package family combines excellent thermal properties with a very attractive cost.
The portfolio of Gen9HV LDMOS devices includes:
– BLP9H10-30, compact, 6 x 10 mm 30W driver
– BLC9H10XS-60P, 60W push-pull driver or final stage
– BLC9H10XS-300P 300W push-pull final stage in a compact 20 mm long package
– BLC9H10XS-350A, 350W asymmetric final stage in a compact 20 mm long package
– BLC9H10XS-600A, 600W asymmetric final stage in a 31 mm long package
Ampleon adds, “This new process, fully optimized for base-station Doherty PA applications is a perfect complement to our world-class Gen10 series. It brings the best possible compromise between performance, cost and size along with the well-known ruggedness, reliability, consistency and linearity of LDMOS”.
Ampleon; www.ampleon.com
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
