LG Innotek selects AIXTRON technology to develop SiC epitaxial wafers

LG Innotek selects AIXTRON technology to develop SiC epitaxial wafers

Business news |
By Field Editor

The system, which was configured for 8 x 6-inch substrates, was delivered in the fourth quarter 2015.

The AIX G5 WW vapor phase epitaxy (VPE) system is based on AIXTRON’s production-proven planetary reactor platform giving the largest batch capacity and highest throughput in the industry. The equipment design aims at squeezing production costs to a minimum, while maintaining excellent production quality.

“We see rising demand for SiC-based systems from major automotive manufacturers. Based on our long-term experience with AIXTRON epitaxy systems, we believe that AIXTRON’s G5 WW tool offers unique advantages such as high throughput and yield on 6-inch wafers. Furthermore, we can pre-qualify SiC epitaxial wafer samples using AIXTRON’s SiC application lab and we appreciate the outstanding, dedicated SiC customer support package,” said Dr. Minseok Kang, Vice President of LG Innotek and the head leader of the Korea’s WPM (World Premier Material) national project for SiC materials development lead by LG Innotek.

“Our AIX G5 WW perfectly matches the industry requirements for high-volume production of SiC-based power electronic devices. We will provide full support to LG Innotek for the quick installation and SiC process qualification of the system,” said Dr. Frank Wischmeyer, Vice President Power Electronics at AIXTRON.

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