Logic level 60-100V MOSFETs in PQFN for higher power density
These MOSFETs deliver claim between 11 and 40% lower RDS(on) than competitive products. Their ultra-low gate charge (Qg) reduces switching losses without increasing conduction losses. Output capacitance (COSS) and reverse recovery charge (Qrr) have been optimized, and the FOM g (R DS(on) x Qg/gd) improved. This allows the IR MOSFET devices to operate at high switching frequencies of up to 6.78 MHz – as required in resonant wireless charging applications. The logic level gate drive provides a low gate threshold voltage (VGS(th)) which means that the MOSFETs can be driven at 5V and directly from microcontrollers. The IR MOSFET family is available now in 60V and 80V, with a 100V device in development.
Infineon; www.infineon.com/IR-MOSFET-logiclevel
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