Low loss 600V superjunction MOSFETs for server and telecom designs

Low loss 600V superjunction MOSFETs for server and telecom designs

New Products |
By Nick Flaherty

onsemi has launched a range of low loss 600V silicon superjunction MOSFETs for high efficiency server and telecom power supplies.

The high performance devices enable power supplies to meet demanding efficiency regulations such as 80 PLUS Titanium, especially at the highly challenging 10 percent load condition. As part of the 600 V SUPERFET V family, three product groups – FAST, Easy Drive and FRFET – are optimized for a variety of applications and topologies.

System reliability is enhanced by a robust body diode and elevated VGSS of ± 30 V.

“80 Plus Titanium certification requires server and data storage hardware to deliver 90 percent power efficiency levels in 10 percent load conditions, and 96 percent efficiencies when dealing with 50 percent loads,” said, Asif Jakwani, senior vice president and general manager, Advanced Power Division, at onsemi. “The FAST, Easy Drive and FRFET versions of our SUPERFET V family are meeting these demands, providing a robust solution that assures ongoing system reliability.

The FAST versions offer the high efficiency for silicon devices in hard switching topologies such as high-end PFC and are optimized to deliver reduced gate charge (Qg) and EOSS losses to enable fast switching. The initial devices include the NTNL041N60S5H with a 41mΩ RDS(on) and NTHL185N60S5H with a 185mΩ RDS(on), and both in a TO-247 package. The NTP185N60S5H is in a TO-220 package and the NTMT185N60S5H is in a 8.0mm x 8.0mm x 1.0mm Power88 package that guarantees MSL 1 and has a Kelvin source configuration to improve gate noise and switching power loss.

The Easy Drive versions are suited to both hard and soft switching topologies and contain an internal gate resistor (Rg) as well as optimized internal capacitance. They are fit to general purpose use in many applications including PFC and LLC. In these devices, the built-in Zener diode between gate and source electrode for over 120mΩ RDS(on) gives less stress on the gate oxide and higher ESD ruggedness leading to better assembly yield and reduced field failures. Two devices are currently available with 99mΩ and 120mΩ RDS(on) – the NTHL099N60S5 and NTHL120N60S5Z are both supplied in a TO-247 package.

The fast recovery (FRFET) versions are suited to soft switching topologies such as phase-shifted full bridge (PSFB) and LLC that benefit from a fast body diode and offer reduced Qrr and Trr. The NTP125N60S5FZ with built-in Zener diode offers 125 mΩ RDS(on) in a TO-220 package while the NTMT061N60S5F offers 61mΩ in a Power88 package. The lowest loss device is the NTHL019N60S5F which has the RDS(on) of 19mΩ in a TO-247 package.

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