Low-loss broadband RF switches deliver high isolation and power
The IDT® F2932 and F2933 are silicon-based, low-distortion 50-ohm single-pole, double-throw (SPDT) switches. With industry-standard 4x4mm 16-pin QFN packages and drop-in compatible footprints and control, their rich combination of specs make the devices ideal for communications and public safety systems, radar and general purpose switching.
At 4 GHz the F2932 and F2933 deliver high isolation of 66 dB; low distortion of 64 dBm IIP3 at 15 dBm tones, 1MHz channel spacing; insertion loss of 0.93 dB, and P1dB of >35 dBm.
The inherent benefits over most competitive products, particularly when compared to typical GaAs-based switches, include better RF performance, greater reliability, easier integration, and lower total system cost.
“These two new devices offer one of the industry’s highest isolation values, and when combined with their low distortion and low insertion loss they provide superior performance for many different high-isolation applications,” said Chris Stephens, general manager of IDT’s RF division.
F2932 and F2933 offer similar RF performance, pin out and control, with the F2932 having an additional Enable/Disable feature allowing all RF paths to be put into an off state and disabling the VCTL feature.
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