Low on-resistance automotive MOSFETs in smaller outlines

Low on-resistance automotive MOSFETs in smaller outlines

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By Jean-Pierre Joosting

Applications include DC-DC converter or load switching in electronic systems in vehicles. Increased industry demand for power-saving LEDs has seen growth in requirements for the N-channel MOSFETs that are used as switches for LED drivers.These MOSFETS address this demand with typical RDS(ON) ratings (@VGS = 4.5V) of 36 mΩ and 65 mΩ respectively. Both devices support a maximum channel temperature of 175°C, which enables wide spread use in a range of automotive applications.

Both devices reduce heat dissipation resulting from turn-on losses by approximately 65% against Toshiba previous product. The MOSFETs are housed in compact SOT-23F flat lead type packages. These reduce PCB footprint by approximately 64% compared to a conventional SOT-89 package, while maintaining a maximum level of 2.4W power dissipation.

Toshiba Electronics Europe:

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