Low on-state resistance power MOSFETs offer more power efficient ORing applications
Claiming the industry’s lowest on-state resistance of 0.72 mΩ (typical value) for 30 V – about 50 percent lower resistance compared to Renesas’ earlier products – and a high-efficiency, small surface mount package (8-pin HVSON), the new products enable high-current control in a smaller package contributing to power savings and miniaturization of the power units used for comparably large scale server storage systems.
The new μPA2766T1A delivers the industry’s lowest on-state resistance of 0.72 mΩ (typical value) for 30 V applications in a small 5 mm x 6 mm package and is less than the on-state resistance of previous Renesas products by approximately half. This contributes to improved power efficiency for the system overall by reducing the conduction loss of the ORing FETs for power supply units used in network servers and storage systems, which are the key applications to contribute to the smart society. In addition, this makes it possible to suppress large voltage drops with large currents. It is possible to attain highly precise power supply voltage even with power supply units having wide current fluctuations.
The 8-pin HVSON package provides low package resistance because a metal plate is used to connect the FET die within the package to the pins. This, combined with the low on-state resistance of the FET die, allows for large-current control as much as rated 130 A (ID (DC)) in spite of the compact 5 mm × 6 mm size of the package. It also helps to reduce equipment size by enabling the use of the minimum number of parallel connections when multiple ORing FETs are connected in parallel to each of the power supply units in order to supply a large current.
The three new MOSFETs, including the μPA2766T1A, have on-state resistance ratings ranging from 0.72 mΩ to 1.05 mΩ (standard value). The range allows better product selection to best meet the user’s requirements in terms of operating current or environmental conditions. It also allows customers to supply optimal products and contributes to improved power efficiency and reduced space requirements.
Samples of the new low on-state resistance power MOSFET products are available now. Mass production of the new products is scheduled to begin in February 2013.
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