Low-power eFlash block for harsh environments
By
eeNews Europe
The two solutions are based on X-FAB’s 180 nm HX018 mixed-signal CMOS technology and are targetted at applications that need to be highly reliable, need reprogramming in the field, are low power and can operate in harsh environments.
The 8 k x 16-bit eFlash IP block is based on Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Flash technology. The eFlash was developed for low-power, mixed signal solutions and has a stand-by mode with a maximum stand-by current of 50 nA. The IP block is qualified to AEC-Q100, and is capable of operating in automotive applications over the -40 °C to 125 °C temperature range.
The NVRAM compiler allows the easy creation, generation and integration of memories from 1-kbits to 16-kbits.
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