Low resistance 800/900V N-channel MOSFETs for small current switching, to 5A
The enhancement mode MOSFETs are based on Toshiba’s π-MOS VIII (Pi-MOS-8) eighth generation planar semiconductor process, which combines high levels of cell integration with optimised cell design. This technology supports reduced gate charge and capacitance without losing the benefits of low RDS(ON).
These MOSFETs are low-current supplements to Toshiba’s existing DTMOS IV line-up of 800V super junction DTMOS4 devices. The 2.5A TK3A90E and 4.5A TK5A90E feature VDSS ratings of 900V and have respective typical RDS(ON) ratings of 3.7Ω and 2.5Ω. Both the 4.0A TK4A80E and 5.0A TK5A80E devices offer VDSS ratings of 800V with respective typical RDS(ON) ratings of 2.8Ω and 1.9Ω.
These MOSFETs offer an ultra-low maximum leakage current of only 10 μA (VDS = 60V) and a gate threshold voltage range of 2.5V to 4.0V (when VDS is 10V and drain current is 0.4 mA). All of the devices are supplied in a standard TO-220SIS form factor.
Toshiba Electronics Europe; www.toshiba.semicon-storage.com
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