Low temperature plasma process stacks GaInAsP lasers on silicon

Low temperature plasma process stacks GaInAsP lasers on silicon

Technology News |
By Julien Happich

The hybrid wafers combined an InP-based wafer with an SOI wafer, bonded at only 150ºC after being irradiated with plasma in a vacuum chamber to activate their respective surfaces.

The new bonding method could be key to designing large scale heterogeneous photonic platforms, such as one-chip optical routers, where large diameter wafers and CMOS fabrication techniques could be used to drive add-on GaInAsP laser sources without deteriorating the underlying driving circuitry through the bonding or growth process.

The hybrid lasers showed lasing operation at room temperature, with a demonstrated threshold current density of 850A/cm2.

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