Low-voltage, 64-Mb Serial Quad I/O SuperFlash memory cuts power in portables

Low-voltage, 64-Mb Serial Quad I/O SuperFlash memory cuts power in portables

New Products |
By eeNews Europe

Features include hardware-controlled device reset and Execute-in-Place (XIP) with no code shadowing; in a standard form factor it has 4-bit multiplexed I/O serial interface. The 1.8V Serial Quad I/O SuperFlash is a low-voltage 64-Megabit device, offering Dual Transfer Rate (DTR) on Microchip’s proprietary SuperFlash NOR Flash technology. DTR gives the ability to output data on both edges of the clock which reduces overall data access time and power consumption. Typical chip-erase time for the SST26WF064C is between 35 and 50 milliseconds, compared to alternative flash devices which take more than 30 seconds to erase.


The SST26WF064C also integrates a hardware-controlled reset functionality enabling a robust device reset. Most serial Flash devices in the market, Microchip asserts, do not support hardware reset function due to pin-count limitations on the package: this part has the option to reconfigure the HOLD# pin for this reset function.


Operating at frequencies reaching 104 MHz, the device enables minimum latency eXecute-In-Place (XIP) capability without the need for code shadowing on Static Random Access Memory (SRAM). The new device uses a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial Flash devices. The SST26WF064C also supports full command-set compatibility with traditional Serial Peripheral Interface (SPI) protocol.


Microchip’s high-performance SuperFlash technology also means the device is based on a proprietary split-gate Flash memory cell giving additional capabilities such as high endurance cycling of up to 100,000 erase/write cycles, data retention of over 100 years and fastest erase times. There are Verilog and IBIS models, as well as device drivers, available.


The SST26WF064C comes in a variety of package options including an 8-contact WDFN (6 x 5 mm), 8-lead SOIJ (5.28 mm), 16-lead SOIC (7.50 mm) and 24-ball TBGA (8 x 6 mm).





If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :    eeNews on Google News


Linked Articles