Low-voltage MOSFETs optimise footprint with dual-sided cooling packages
The DSOP Advance package shares the same 5 x 6 mm footprint as a SOP Advance device. In comparative tests and when used in conjunction with a suitable heatsink, operating temperatures for 30V MOSFETs were reduced by more than 34% at currents above 30A. In addition, in some designs the reduced thermal resistance of a DSOP Advance package may support elimination of a heatsink.
Toshiba will offer DSOP Advance packages with its existing UMOS VIII-H and its new UMOS IX-H families of MOSFET technologies. These technologies combine optimum on-resistance (RDS(ON)) ratings with low output capacitance to deliver ultra-efficient switching performance. DSOP Advance options will be available for a number of MOSFETs with voltage ratings between 30V and 100V initially. Target applications for the DSOP Advance MOSFETs will include high-power density, high-performance switching designs including synchronous rectification circuitry in servers and telecoms power supply equipment, as well as power tools.
Toshiba Electronics Europe; www.toshiba-components.com
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