Currently, the market demand is increasing dramatically for AC-powered products, including LED lighting drivers, AC-DC converter ICs and AC-DC chargers commonly found in home appliances. MagnaChip says it has successfully reduced device sizes of UHV nLDMOS by 30% and JFET by 50% from its previous generation. The company’s latest UHV technology, designated as HP35ULC700, shortens the manufacturing process and reduces cost by having seven photolithographic steps less than the Company’s previous generation, which was achieved by simplifying the front end process and reducing the minimum metal number from two to one.
UHV technologies have multiple requirements because different systems and IC schemes are used in various applications. To cover various requirements, MagnaChip offers multiple UHV technologies in terms of gate oxide schemes. When high system integration is necessary, dual gate oxide UHV technology can be used that provides the optimized low voltage, high voltage, and ultra-high voltage devices. When manufacturing cost is important and control logic device density is high, low-voltage single-gate oxide UHV technology can be used. When manufacturing cost is important and superior high-voltage performance to drive external discrete high voltage MOSFETs is necessary, high voltage single-gate oxide UHV technology can be used.
UHV devices can be designed with different operation voltages from 350V to 700V. Optionally, 700V nLDMOS devices can be integrated with 700V JFET, a Zener diode, a 700V resistor, thin film resistors, a MIM capacitance and fuses to yield complete AC-DC converter ICs or LED driver ICs.
MagnaChip Semiconductor – www.magnachip.com