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Memory compilers improve power on edge AI devices

Memory compilers improve power on edge AI devices

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By Rich Pell



Cameron Fisher, CEO and Founder of Mobile Semiconductor, said, “Drawing on the expertise we acquired developing our successful Compilers on GLOBALFOUNDRIES 22FDX® platform, we fully expect that these new generations of Ultra Low Leakage and Ultra Low Power Memory Compilers will meet and exceed our customer’s expectations in Edge AI.”

The new ULL and ULP memory compliers on the GLOBALFOUNDRIES 22FDX platform feature leakage numbers in the nano-amp range. The ULL and ULP Compilers improve the performance to power ratio making them ideal for Edge AI and Machine Learning applications which are measured in tera-operations per watt (TOPS/WATT) and host new power modes giving the engineer maximum flexibility.

The graph above shows the relative power versus performance relationship between the ULP/ULL compilers optimized for Edge applications and the Ultra High Speed memory compiler which is optimized for cloud-based servers.

Fisher continued, “Mobile Semiconductor remains the leader in providing low power solutions and these compliers remove the roadblocks that engineers have struggled with in past designs. Almost every edge product developed for Edge AI, Machine Learning and IoT will have new and more stringent power demands placed on them. We believe that Mobile Semiconductor is meeting the low power needs of this market.”

www.mobile-semi.com

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