The company’s Microsemi subsidiary already ships SiC power modules, but the 35 devices are the first discrete chips to ship, aimed at Electric Vehicles (EVs) and other high-power applications in the industrial, aerospace and defence markets.
The devices are available in volume, supported by comprehensive development services, tools and reference designs, and offer outstanding ruggedness proven through rigorous testing. The SiC power die, discretes and modules are offered across a range of voltage, current ratings and package types. They are aimed at designs such as external charging stations, onboard chargers, DC-DC converters and powertrain/traction controllers.
The SiC power MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability. The company says its SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage.
Microchip says its SiC MOSFETs outperform alternatives in ruggedness tests with high levels of gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of Repetitive UIS (RUIS) testing.
Microchip is one of the few suppliers to provide a range of both silicon and SiC power discrete and module solutions, joining STMicroelectronics, Rohm and Infineon as well as UnitedSiC. The SiC devices are backed by Microchip’s customer-driven obsolescence practice, which ensures devices will continue to be produced for as long as customers need them.
The expanded SiC portfolio is supported by a range of SiC SPICE models, SiC driver board reference designs and a Power Factor Correction (PFC) Vienna reference design. All the company’s SiC power devices are available in production volumes along with their associated support offerings. A variety of die and package options are available for the SiC MOSFETs and SiC diodes.
Related SiC power stories:
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- 650V SIC SCHOTTKY DIODES IN NEW PACKAGE SIZES REACH 40A
- ANALOG DEVICES BUYS INTO UNITEDSIC FOR WIDE BANDGAP POWER