Micron overtakes DRAM competition, avoids EUV
Castellano has produced detailed charts that show Micron Technology Inc. (Boise, Idaho) has come from a lagging position in DRAM production to be the first, and so-far only, company to be producing on a so-called 1z-nm node.
Samsung and SK Hynix, the main DRAM competitors, are only due to start their production at the 1z-nm node in 2020. As a result Micron is now two quarters ahead of the competition after being as much as 12 months behind Samsung at the beginning of 2019.
Next: Another table
Micron’s early move leapfrogging the 1y-nm node means that 6 percent of its DRAM bit-shipments on 1z-nm in 2019 and it will lead the market in 2020 with 28 percent of bit-shipments on 1z-nm and likely to be the first DRAM company to the so-called 1-alpha-nm node, Castellano argues.
Typically moving from one node to the next in DRAM provides the manufacturer with a 20 to 25 percent cost improvement. Micron has achieved this while remaining on deep ultraviolet (DUV) lithography. Samsung and SK Hynix however are preparing to introduce EUV lithography, which may have a negative effect on the economy of scaling and encourage companies to delay.
Samsung is planning to use EUV for one layer in the 1z-nm node in 2020 and SK Hynix will use EUV for a single layer in the 1-alpha-nm node in 2021, Castellano said.
Related links and articles:
News articles:
DRAM capex to drop in 2019 amid pricing weakness
Chinese startup starts DRAM production
Micron idles memory manufacturing but outlook cheers
If you enjoyed this article, you will like the following ones: don't miss them by subscribing to :
