Micron ships 232-layer NAND flash memory

Micron ships 232-layer NAND flash memory

New Products |
By Nick Flaherty

Micron Technology has begun volume production of its 232-layer, triple bit per cell (TLC) NAND flash memory first detailed by eeNews Europe back in May.

The device uses the world’s first six-plane TLC production NAND. It has the most planes per die of any TLC flash3 and features independent read capability in each plane. The combination of high I/O speed, read and write latency, and Micron’s six-plane architecture provides best-in-class data transfers in many configurations. This structure ensures fewer collisions between write and read commands and drives system-level quality-of-service improvements.

The same technology node used for the 232-layer device enables the introduction of I/O speeds of 2.4 Gbyte/s to meet the low-latency and high-throughput needs of data-centric workloads such as artificial intelligence and machine learning, unstructured databases and real-time analytics, and cloud computing. This is 50% faster than the fastest 176-layer device.

The 232-layer NAND is the first in production to enable NV-LPDDR4, a low-voltage interface that delivers per-bit transfer savings of more than 30% compared to prior I/O interfaces.  The interface is also backward compatible to support legacy controllers and systems.

The TLC density of 14.6 Gbit/mm2 means the areal density is between 35% and 100% greater than competing TLC products in the market today. 

Shipping in a new 11.5mm x 13.5mm package, 232-layer NAND features a 28% smaller package size than previous Micron generations, making it the smallest high-density NAND available.

“Micron’s 232-layer NAND is a watershed moment for storage innovation as first proof of the capability to scale 3D NAND to more than 200 layers in production,” said Scott DeBoer, executive vice president of technology and products at Micron. “This ground breaking technology required extensive innovation, including advanced process capabilities to create high aspect ratio structures, novel materials advancements and leading-edge design enhancements that build on our market-leading 176-layer NAND technology.”

“Micron has sustained technology leadership with successive first-to-market advancements in NAND layer count that enable benefits like longer battery life and more compact storage for mobile devices, better performance in cloud computing, and faster training of AI models,” said Sumit Sadana, chief business officer at Micron. “Our 232-layer NAND is the new foundation and standard for end-to-end storage innovation underpinning digital transformation across industries.”

Micron’s 232-layer NAND is shipping to customers in component form and through its Crucial SSD consumer product line.

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