Micron tips arrival of 232-layer 3D-NAND

Technology News |
By Peter Clarke

Micron Technology Inc. (Boise, Idaho) has said that it will start shipping its next generation of 3D-NAND memory component, a 232-layer device, later this year.

Scott DeBoer, Micron’s executive vice president for technology and products, disclosed a roadmap for 3D-NAND over the next decade that would go beyond 400 layers.

Roadmap of 3D-NAND layer development. No timings given but Micron is looking to 400-plus layers within the decade. Source: Micron Technology Inc.

Micron already holds a strong position in 3D-NAND manufacturing 96- and 176-layer flash chips in volume. DeBoer said the company would start to ramp up manufacturing of the 232-layer flash late in calendar 2022. This would give the company a clear lead in the market.

The company showed a die of a 1Tbit 3D-NAND memory with a triple-level cell but DeBoer said Micron’s focus would include maintaining 4bit per cell leadership.

The memory would include CMOS under array technology and twin stack. Performance details will come later DeBoer said the 232-layer versions would provide increased density, power and bandwidth compared with the 176-layer generation.

Solid-state drives based on the higher capacity 3D-NAND devices are expected in 2023.

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Kioxia, Western Digital develop 162-layer 3D-NAND

SK Hynix joins Micron on 176 layers for 3D-NAND flash

Micron plans to spend $150 billion on memory production


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