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Microsemi introduces 15 RF, microwave and mmWave devices at IMS 2016

Microsemi introduces 15 RF, microwave and mmWave devices at IMS 2016

New Products |
By Jean-Pierre Joosting



GaN HEMT RF power transistors and drivers cover L-Band to 750 W

The RF power transistor portfolio based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology adds six L-band RF power transistors and drivers rated between 120 W and 750 W. The latest 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V, and 1416GN-120E/EL/EP RF power transistors and drivers deliver outstanding size, weight, power and efficiency performance in a wide range of radar, avionics and communications applications with compact packaging options.

 

Monolithic SPST and SPDT PIN switch elements deliver up to 100 W through 6 GHz

The MPS2R10-606, MPS4103-607 and MPS2R11-608 are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss of less than 0.3 dB, 55 dB of isolation and 500 ns switching times over the entire 100 MHz to 6 GHz frequency range. These products are ideal replacements for the conventional shunt mounted chip and series mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches. Capable of switching up to 100 W of continuous wave (CW) power, these devices are ideal for transmit/receive (T/R) and high power switching in military and commercial radio, radar and cellular infrastructure applications. These products meet RoHS requirements per EU directive 2002/95/EC.

 


Low-cost MELF PIN diodes feature 2 GHz switching, 500 V breakdown voltage  

The UMX502-UMX812 represents a new series of low cost, metal electrode leadless face bonded (MELF) high power, ceramic PIN diodes. This series of PIN diodes are hermetically sealed, high reliability surface mount packaged devices with full face bonded chips and very low inductance construction. The MELF PIN diodes are ideal for a wide range of general purpose and broadband switching, attenuating and phase-shifting applications from high frequency through 2 GHz, as well as for use in MRI coil switching and other low magnetic applications. These RoHS-compliant products meet the requirements of EU directive 2002/95/EC, and are fully compatible with pick and place and solder reflow manufacturing techniques. UMX502-UMX812, are ESD HBM Class 2 products, and exhibit breakdown voltage ratings up to 500 V.

 

High performance MMICs    

The MMIC portfolio spans the DC to 65 GHz frequency range and targets a broad range of applications including those in electronic warfare, radars, test and measurement instrumentation, and microwave communications. The portfolio is based on high performance process technologies and comprises high power and low noise broadband amplifiers, amplifier modules, prescalers, attenuators and switches. Microsemi offers 20 distributed amplifier products. The company’s prescalers combine higher frequency operation, the flexibility to divide by a large number of ratios and excellent residual phase noise.

 

Lowest sleep state current sub-GHz transceiver

Operating in the 779 to 965 MHz unlicensed industrial, scientific and medical (ISM) frequency bands, the ZL70550 consumes only 2.8 mA while transmitting at -10 dBm output power and a similar 2.5 mA during reception. It offers an extremely low sleep state current of 10 nA, making it ideal for low-duty cycle applications. Microsemi addresses the high cost of battery replacement issues common with medical and industrial customers by leveraging the intellectual property from its ultra-low power implantable pacemakers and hearing aids to provide the lowest power wireless link in an extremely small form factor that is easy to deploy.

 


Wi-Fi high-linearity power amplifiers and front-end modules

Microsemi has an expanding portfolio of world-class customer premise equipment (CPE) products for Wi-Fi 802.11 a/b/g/n/ac applications. Designed for medium power applications, these 5 GHz and 2 GHz single band front-end modules (FEMs) are optimized for long packet EVM performance ideally suited for wireless client set-top box, gateway, and 4K ultra high-definition (HD) platforms. Where cost and size are critical, a dual-band (5 GHz / 2 GHz) FEM will be offered in compact 4-mm x 3-mm 28 pin QFN package, using 3.3 V supply, ideal for smart television and over-the-top (OTT) content platforms.   

Microsemi offers a family of high-linearity power amplifiers, featuring the latest in 2 GHz amplifiers, delivering +23 dBm of linear power with market leading current consumption, critical for thermal management for today’s newer 4 x 4 and 8 x 8 multiuser multiple input, multiple output (MIMO) platforms.

www.microsemi.com

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