Miniature 30-V MOSFETs claim industry-leading RDS(ON) performance
The new miniature, 30 V devices also offer low input capacitance (Ciss) to ensure an excellent RDS(ON)*Ciss figure of merit (FOM).
Toshiba’s new TPN and TPH series of 30 V MOSFETs are based on the company’s eighth generation U-MOSVIII-H process and supplied in miniature TSON Advance and SOP Advance SMD packages respectively. Target applications will include isolated and non-isolated DC-DC converters and power management circuitry where low-power operation, rapid switching and minimum PCB real estate are key design criteria.
The new TPN 30 V MOSFETs in the TSON Advance package have a 3 mm x 3 mm footprint, while devices in the SOP Advance 30 V TPH series measure 5 mm x 6 mm. At 10 V, the five devices in the TPN 30 V MOSFET series have typical RDS(ON) ratings from 9.4 mΩ to 2.2 mΩ and typical Ciss ratings from 630 pF to 1600 pF. There are seven devices in the new TPH series with typical RDS(ON) ratings (at VGS = 10V) from 9.4 mΩ to just 0.77 mΩ. Typical Ciss ratings for the TPH devices (at VGS = 10V) are between 510 pF and 5300 pF.
Toshiba’s eighth generation UMOS trench process has allowed the company to deliver improvements in trade-off characteristics between RDS(ON) and Ciss. This helps to reduce conduction and drive losses as well as improving switching speeds and minimising radiated noise. UMOSVIII-H MOSFETs help to improve the efficiency and reduce the size of target applications without compromising performance.
Samples of the new MOSFETs are available now and mass production will begin in the summer.
Visit Toshiba at www.toshiba-components.com
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