Mitsubishi set to ship 2.0kV IGBT module for industrial use
Mitsubishi Electric plans to ship samples of its 2.0kV insulated-gate bipolar transistor (IGBT) module for industrial use next month.
The LV100-type T-series IGBT module is expected to reduce the size and power consumption of 1500V converters for renewable energy sources with a switching frequency from 1 to 5kHz. 1500V is the upper limit of the EU’s Low Voltage Directive which can be a struggle to achieve with 1700V devices, says Mitsubishi.
The module samples have a blocking-voltage capability of 2.0kV for large capacity power systems of several hundred kW to several MW. The 7th-generation carrier storage IGBT and Relaxed Field of Cathode (RFC) diode in the module help reduce the power consumption of power-conversion equipment for renewable-energy power supply.
The industrial LV100-type package is suitable for large-capacity systems with an easy paralleling configuration. The three AC main terminals help to spread and equalize current density for increased inverter capacity, while integrating the structure’s insulated and copper-base parts and optimizing the internal electrode structure increases thermal cycle life and lowers package inductance for enhanced reliability.
The existing 7th generation modules have a current capability of 800A and 1200A at 1200V and 1700V.
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