Mitsubishi ships SBD-embedded SiC modules
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Mitsubishi has started shipping low-current 3.3kV/400A and 3.3kV/200A versions of its Schottky barrier diode (SBD) embedded silicon carbide (SiC) MOSFET module.
The Unifull SBD MOSFET module from Mitsubishi is aimed at for large industrial equipment, including rolling stock and electric power systems.
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Together with the existing 3.3kV/800A version, the Unifull series has three modules for inverters capable of increasing power output and power conversion efficiency in large industrial equipment.
The modules use an optimized package structure to reduce switching loss and improve SiC performance. Compared to existing power modules, Unifull modules, significantly reduce switching loss and contribute to higher power output and efficiency in large industrial equipment, making them suitable for auxiliary power supplies in railcars and drive systems with relatively small capacities.
The new modules will be shown at the PCIM 2024 exhibition in Nuremberg, Germany, this week.
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