Mitsubishi to sample 3.3kV SBD-embedded SiC-MOSFET module

Mitsubishi to sample 3.3kV SBD-embedded SiC-MOSFET module

New Products |
By Nick Flaherty

Mitsubishi Electric is to sample a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) MOSFET module with a dual-type 3.3kV withstand voltage and 6.0kVrms dielectric strength

The module is expected to boost power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems and will be shown PCIM Europe 2023 this week before sampling starts at the end of May.

Mitsubishi Electric has already released four full-SiC modules and two 3.3kV high-voltage dual-type LV100 modules. The module adds a built-in SBD and an optimized package structure the current flow to boost the performance of inverter designs. This reduces switching loss by 91% compared to company’s existing Si power module and by 66% compared to existing SiC power module, reducing the overall inverter power loss and contributing to higher output and efficiency.


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