Mitsubishi verifies 7 GHz band 5G GaN PA module
Mitsubishi Electric Corporation claims to have developed the first compact 7 GHz band gallium nitride (GaN) power amplifier module (PAM) with the highest power efficiency.
The GaN PAM is expected to enhance both the ease of installation and the power efficiency of 5G-Advanced base stations, supporting the transition to 6G. Mitsubishi Electric successfully verified the performance of the new PAM in a demonstration using 5G-Advanced communication signals for the first time.
Mitsubishi Electric developed its 7 GHz PAM using proprietary matching-circuit technology and high-performance GaN transistors. The compact prototype module measures only 12.0 x 8.0 mm, thanks to the high-density mounting of components, which enhances the installation efficiency of 5G-Advanced base stations. Going forward, Mitsubishi Electric will continue its research and development efforts aimed at the practical application of GaN power amplifier modules in 5G-Advanced base stations.
5G-Advanced offers high-speed, ultra-wideband, and low-latency capabilities for broadband communications. Furthermore, PAs used for 5G and 5G Advanced are required to operate in their linear region to minimise RF distortion. However, the higher-order modulation schemes, such as 256 Quadrature Amplitude Modulation (QAM) used in 5G and 5G-Advanced, are extremely sensitive to non-linear behaviour.
Although GaN-on-SiC technology operates at frequencies of up to 40 GHz and beyond, GaN-on-Silicon encounters various challenges at higher frequencies, nearing the 7 GHz band for 5G-Advanced, such as significant RF losses and reduced thermal conductivity that compromise signal integrity and limit efficiency. In comparison to SiC, silicon substrates demonstrate inferior thermal performance, presenting a challenge for thermal management at higher switching speeds as losses increase with frequency. Parasitic effects also pose issues at these higher frequencies. As base stations necessitate a fixed load impedance, achieving optimal power transfer becomes more difficult due to these parasitic effects and the need for complex impedance transformation networks.
The breakthrough in producing the 7 GHz GaN PAM will be presented at the IEEE International Microwave Symposium 2025.
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