mmWave chipsets for 5G 2×2 antenna systems
The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets from Renesas Electronics use a 5.1mm x 5.1mm BGA package and feature the industry’s highest Tx output power capability in silicon for the n257, n258, and 261 bands form 24 to 29.5GHz.
The parts provide more than 15.5dBm linear output power per channel defined at an EVM (error vector magnitude) of less than 3 percent using a 400MHz 5GNR CP-OFDM waveform with 120kHz sub-carrier spacing and 11.7dB PAR.
This enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide-area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.
The F5288 (26.5GHz – 29.5GHz) and F5268 (24.25GHz – 27.5GHz) chipsets use a Dynamic Array Power (DAP) technology that enables high-efficiency operation at linear output power levels programmable from 10 dBm up to 16 dBm. This makes the third-generation ICs suitable for mobile and fixed wireless applications with a wide range of output power requirements. This flexibility allows communications customers to reduce design times by repurposing their antenna array designs across different applications.
ArraySense technology with comprehensive on-chip sensor network allows users to monitor IC performance in array operation and apply critical corrections real-time. RapidBeam advanced digital control technology enables simultaneous synchronous and asynchronous control of several beamformer ICs to achieve extremely fast beamsteering operations while phase and gain control in the chips includes 360° phase control range with true 6-bit resolution and up to 31.5dB gain control with 0.5dB steps
Temperature compensation techniques to minimize RF performance degradation with varying temperatures to achieve a receive noise figure as low as ~4.5dB at room temperature and under 5.5dB at temperatures up to 95°C.
“Adequate signal range – or lack thereof – remains the biggest challenge as the industry shifts to 5G mmWave technologies for both urban and suburban mobile and fixed wireless networks,” said Naveen Yanduru, Vice President of RF Communications Product Division at Renesas. “Renesas’ new beamformer ICs are a game changer for this evolving market, offering small, integrated beamforming solutions with high output power that enable communications customers to implement cost-effective basestation and FWA designs for long-range wireless applications.”
The dual-polarization 8-channel architecture provides a highly symmetric and very low loss antenna routing network to improve overall antenna efficiency and reduce board costs. The exposed die package allows for more efficient thermal management at the board with improved heat dissipation through the back of the IC. In addition, Renesas designed the package pinmap to simplify board design and reduce design risks. Lower complexity PCB design with minimum layer counts results in reduced board costs and faster time to market.
To further simplify mmWave system design, Renesas has developed a Base Station Antenna Front End reference design based on the F5288 and F5268 beamformer chips with the F5728 up/down converters, 8V97003 wideband mmWave synthesizer, and a variety of Renesas PMIC power management devices.
The F5288 and F5268 beamformer ICs and evaluation systems are available now.
Related mmWave articles
- Sivers Semiconductors in mmWave chip buy
- mmWave WiFi rolls out on UK railways
- Liverpool mmWave trial network adds 5G small cells
- 5G mmWave connector reaches 25GHz
- Qualcomm extends GF deal to ramp up 5G mmwave
Other articles on eeNews Europe
- Plumerai develops embedded AI accelerator IP core for FPGAs
- Embedded RFID startup raises €15m for industrial deployment
- Ericsson builds digital twins for 5G networks
- Imagination, Mobica team for virtualized development environment
- NXP changes naming for i.MX family
- Europe to build independent SiC value chain