
DRAM and flash memory chip supplier SK hynix has announced that it has developed what it claims is the world’s fastest mobile dynamic random access memory (DRAM). The new product, LPDDR5T, operates at a data rate of 9.6 gigabits per second (Gbps) – 13% faster than the previous generation LPDDR5X.
To highlight the maximum speed the product features, says the company, it added ‘Turbo’ at the end of the standard name LPDDR5. The device, which operates in the ultra-low voltage range of 1.01 to 1.12V set by the JEDEC (Joint Electron Device Engineering Council), is a product that is offered as not only featuring utmost speed but ultra-low power consumption as well.
The company says that it expects the application of LPDDR5T to expand beyond smartphones to artificial intelligence (AI), machine learning and augmented/virtual reality (AR/VR).
“The company pushed the technology to new limits in just two months after LPDDR5X, mobile DRAM with 8.5Gbps specification, was introduced to the market in November 2022,” says Sungsoo Ryu, Head of DRAM Product Planning at SK hynix. “We will solidify our leadership in the mobile DRAM market by providing products of various storage capacities that meet customers’ needs.”
The company says that it has provided customers with samples of a 16 gigabyte (GB) multi-chip package, which combines multiple LPDDR5T chips into one package. The packaged product can process 77GB of data per second, which is equivalent to transferring fifteen FHD (Full-HD) movies in one second.
The company plans to begin mass production of LPDDR5T using its 1anm technology, the fourth generation of the 10nm technology, in the second half of the year.