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Modelling results for 3D DRAM

Modelling results for 3D DRAM

Technology News |
By Nick Flaherty



Neo Semiconductor in the US has released the latest simulations of its 3D X-DRAM multilevel memory technology.  

The 3D DRAM technology developed by Neo Semiconductor uses a Floating Body Cell (FBC) technology with one transistor and zero capacitors for each data bit. The simple 3D structure makes 3D X-DRAM less risky and costly than other 3D DRAM alternatives, using a self-aligned process similar to 3D NAND for higher manufacturing yields.

Neo estimates 3D X-DRAM achieves 128 Gbit density with 230 layers, four times better than 2D DRAM. The TCAD simulations show the 3D X-DRAM delivers < 1 V operation with write time of under 3 ns at the cell level and a 20 uA sensing margin. The data retention is over 100 ms and the design has an endurance of over 10E16 cycles.

“Semiconductor manufacturers rely on TCAD tools to accelerate development and optimize products using virtual experiments rather than physical ones,” said Andy Hsu, Founder and CEO of Neo Semiconductor who has over 120 US patents. “We use these same tools to create models and run simulations demonstrating the feasibility of adopting 3D X-DRAM technology to bring 3D DRAM products to market.”

“A new memory architecture with 3D DRAM technology will represent the future of memory in order to accelerate and scale DRAM to new levels,” said Jay Kramer President of Network Storage Advisors. “Neo Semiconductor is leading the way with an innovative design that not only will address new levels of performance, reduced power consumption and smaller footprint but will be the first to power the next generation of memory that can enable new applications in the marketplace.”

Neo Semiconductor was founded in 2012 by Andy Hsu and a team in San Jose, California, and owns more than 24 US patents, developing a 3D NAND architecture named X-NAND in 2020 that can achieve SLC performance from TLC and QLC memory to provide high-speed, low-cost solutions for many applications, including 5G and AI. The 3D X-DRAM technology was launched earlier this year.

neosemic.com/.

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